Method for manufacturing a bipolar transistor and bipolar transistor manufactured by the method

Abstract

A bipolar transistor and a method for manufacturing the bipolar transistor is disclosed. The bipolar transistor is formed by the steps of: doping of a surface region of a substrate with a first doping to form an active emitter region; formation of at least one cavity in the substrate; application of a dielectric isolation layer to the surface of the at least one cavity in the substrate; formation of a contiguous base region with a second doping both in the at least one cavity to provide a base connection region, electrically isolated from the substrate by the dielectric isolation layer, and also at least partially on the formed active emitter region to provide a base region electrically connected to the substrate; and formation of a collector region with a third doping at least on the formed base region to provide a collector electrically connected to the formed base region.

Dependencies are inferred from the claim text.