Semiconductor device and method of manufacturing the same
AssigneeNissan Motor Co., Ltd.
InventorsYoshio Shimoida, Masakatsu Hoshi, Tetsuya Hayashi, Hideaki Tanaka
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Abstract
A semiconductor device of the invention includes a first conductive type semiconductor base substrate; and a switching mechanism which is formed on a first main surface of the semiconductor base substrate and switches ON/OFF of a current. In the semiconductor base substrate, a plurality of columnar hetero-semiconductor regions are formed at spaced intervals within the semiconductor substrate, and the hetero-semiconductor regions are made of a semiconductor material having a different band gap from the semiconductor substrate and extend between the first main surface and a second main surface opposite to the first main surface.
Claims5
A semiconductor device, comprising:
- a first conductive type semiconductor base substrate;
- and
- a switching mechanism which is formed on a first main surface of the semiconductor base substrate and switches ON/OFF of a current,
- wherein a plurality of columnar hetero-semiconductor regions, which are made of a semiconductor material having a different band gap from the semiconductor base substrate, are formed at spaced intervals within the semiconductor base substrate, and the hetero-semiconductor regions extend between the first main surface and a second main surface opposite to the first main surface.
Dependencies are inferred from the claim text.