Semiconductor device and manufacturing method thereof
AssigneeEudyna Devices Inc.
InventorsKen Nakata, Takeshi Kawasaki, Seiji Yaegashi
Life of this patent
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Abstract
A semiconductor device includes a GaN-based semiconductor layer that is formed on a substrate and an opening region, an electron conduction layer formed on an inner surface of the opening region, an electron supply layer that has a larger band gap than the electron conduction layer and is formed on the electron conduction layer disposed on the inner surface of the opening region, and a gate electrode formed on a side surface of the electron supply layer in the opening region. A source electrode is formed on the GaN-based semiconductor layer. A drain electrode is connected to a surface of the GaN-based semiconductor layer opposite to the source electrode.
Claims13
A semiconductor device including:
- a GaN-based semiconductor layer that is formed on a substrate and an opening region;
- an electron conduction layer formed on an inner surface of the opening region;
- an electron supply layer that has a larger band gap than the electron conduction layer and is formed on the electron conduction layer disposed on the inner surface of the opening region;
- a source electrode formed on the GaN-based semiconductor layer;
- and
- a drain electrode connected to a surface of the GaN-based semiconductor layer opposite to the source electrode.
A method of manufacturing a semiconductor device comprising:
- forming a GaN-based semiconductor layer on a substrate;
- forming an opening region on the GaN-based semiconductor layer;
- forming an electron conduction layer and an electron supply layer on a side surface of the GaN-based semiconductor layer in the opening region in this order;
- forming a gate electrode on a side surface of the electron supply layer in the opening region;
- forming a source electrode on the GaN-based semiconductor layer;
- and
- forming a drain electrode connected to a surface of the GaN-based semiconductor layer opposite to the source electrode.
Dependencies are inferred from the claim text.