Back to results
US 2006/0220057 A1Published application
Group III-nitride light emitting device
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsHyun Shim, Suk Yoon, Jae Ro, Seung Chae
Life of this patent
Estimating the term…
Abstract
The invention provides a group III-nitride light emitting device having improved external quantum efficiency and brightness. The light emitting device comprises an n-type clad layer, an active layer and a p-type clad layer formed in their order. Also, a p-electrode is formed on the p-type clad layer, wherein the p-electrode comprises CuInO2 layer, a transparent conductive oxide layer and a reflective metal layer sequentially formed on the p-type clad layer. The reflective metal layer may be an Ag layer or an Al layer.
Claims11
A group III-nitride light emitting device comprising:
- an n-type clad layer;
- an active layer formed on the n-type clad layer;
- a p-type clad layer formed on the active layer;
- and
- a p-electrode having a CuInO2 layer, a transparent conductive oxide layer and a reflective metal layer sequentially formed on the p-type clad layer.
2 more elements
Dependencies are inferred from the claim text.