Semiconductor light emitting device
AssigneeKabushiki Kaisha Toshiba
InventorsChisato Furukawa, Takafumi Nakamura
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AssigneeKabushiki Kaisha Toshiba
InventorsChisato Furukawa, Takafumi Nakamura
Estimating the term…
A semiconductor light emitting device may include a first lead; a second lead; a first semiconductor light emitting element mounted on the first lead, being configured to emit a light having an optical emission spectrum no more than 400 nm from a light extraction surface of the first semiconductor light emitting element; a second semiconductor light emitting element mounted on the second lead, being configured to emit a light having a peak wavelength in no less than 550 nm; an ultraviolet absorbing layer configured to cover the light extraction surface of the first semiconductor light emitting element; and a sealing resin configured to cover the ultraviolet absorbing layer, first semiconductor light emitting element and the second semiconductor light emitting element.
A semiconductor light emitting device, comprising:
A semiconductor light emitting device, comprising:
Dependencies are inferred from the claim text.