Nitride semiconductor light emitting device

A nitride semiconductor light emitting device having a rectangular top view composed of two short edges and two long edges, comprising:

• an n-type nitride semiconductor layer formed on a substrate;
• an n-electrode including an n-side bonding pad expanding from a corner on an upper surface of the n-type nitride semiconductor layer and a finger-type n-electrode extending away from the n-side bonding pad;
• a mesa structure including an active layer and a p-type nitride semiconductor layer deposited in their order on a portion of the n-type nitride semiconductor layer where the n-electrode is not formed;
• an ohmic contact layer formed on a substantially entire upper surface of the mesa structure;
• and
• a p-electrode including a p-side bonding pad expanding from the center of a short edge that does not compose the corner in which the n-side bonding pad is positioned and a finger-type p-electrode extending away from the p-side bonding pad.