Semiconductor device and fabrication method of the same
AssigneeEudyna Devices Inc.
InventorsSeiji Yaegashi, Takeshi Kawasaki, Ken Nakata
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Abstract
A semiconductor device includes a mask layer having openings on a substrate, a GaN-based semiconductor layer selectively formed on the substrate with the mask layer that serves as a mask, a gate electrode and either a source electrode or an emitter electrode formed on the GaN-based semiconductor layer, and a drain electrode or a collector electrode connected on a surface of the first semiconductor layer that faces the GaN-based semiconductor layer or an opposite side of the first semiconductor layer.
Claims27
A semiconductor device comprising:
- a mask layer having openings on a substrate;
- a GaN-based semiconductor layer selectively formed on the substrate with the mask layer that is used as a mask;
- a gate electrode and either a source electrode or an emitter electrode formed on the GaN-based semiconductor layer;
- and
- a drain electrode or a collector electrode formed either on or below the GaN-based semiconductor layer.
A semiconductor device comprising:
- a first semiconductor layer formed on a substrate;
- a GaN-based semiconductor layer selectively grown on the first semiconductor layer;
- a gate electrode formed on side faces of the GaN-based semiconductor layer;
- a source electrode or an emitter electrode formed on the GaN-based semiconductor layer;
- and
- a drain electrode or a collector electrode connected on a surface of the first semiconductor layer that faces the GaN-based semiconductor layer or below an opposite surface of the first semiconductor layer.
A fabrication method of a semiconductor device comprising:
- forming a mask layer having openings on a substrate;
- forming a GaN-based semiconductor layer selectively on the substrate with the mask layer that is used as a mask;
- forming a gate electrode and either a source electrode or an emitter electrode on the GaN-based semiconductor layer;
- and
- forming a drain electrode or a collector electrode formed either on or below the GaN-based semiconductor layer.
A fabrication method of a semiconductor device comprising:
- forming a first semiconductor layer on a substrate;
- forming a mask layer having openings on the first semiconductor layer;
- selectively forming a GaN-based semiconductor layer in the openings on the first semiconductor layer;
- forming a gate electrode on side faces of the GaN-based semiconductor layer;
- forming a source electrode or an emitter electrode on the GaN-based semiconductor layer;
- and
- forming a drain electrode or a collector electrode connected on a surface of the first semiconductor layer that faces the GaN-based semiconductor layer or below an opposite surface of the first semiconductor layer.
Dependencies are inferred from the claim text.