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US 2006/0220039 A1Published application
Semiconductor device, method of manufacturing the same, and substrate for manufacturing the same
AssigneesEudyna Devices Inc., Fujitsu Limited
InventorsMitsunori Yokoyama, Kenji Imanishi, Toshihide Kikkawa
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Abstract
A semiconductor device includes a substrate, a buffer layer that is formed with an aluminum nitride layer on the substrate and has a film thickness of 5 nm to 40 nm, an operating layer that is formed with a gallium nitride-based semiconductor on the buffer layer, and a control electrode that is formed on the operating layer.
Claims12
A semiconductor device comprising:
- a substrate;
- a buffer layer that is formed with an aluminum nitride layer on the substrate and has a film thickness of 5 nm to 40 nm;
- an operating layer that is formed with a gallium nitride-based semiconductor on the buffer layer;
- and
- a control electrode that is formed on the operating layer.
2 more elements
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a buffer layer on a substrate by metal organic chemical vapor deposition, the buffer layer being an aluminum nitride layer having a film thickness of 5 nm to 40 nm;
- forming an operating layer on the buffer layer by metal organic chemical vapor deposition, the operating layer being formed with a gallium nitride-based semiconductor;
- and
- forming a control electrode on the operating layer.
1 more element
A substrate for semiconductor device comprising:
- a substrate;
- and
- a buffer layer that is formed with an aluminum nitride layer on the substrate and has a film thickness of 5 nm to 40 nm.
Dependencies are inferred from the claim text.