Electro-optical device, method of manufacturing the same, and electronic apparatus

A method of manufacturing an electro-optical device including a substrate, data lines and scanning lines that are arranged so as to intersect each other on the substrate, top-gate-type thin film transistors disposed below the data lines, storage capacitors disposed above the data lines, and pixel electrodes disposed above the storage capacitors, the method comprising:

• forming the thin film transistors in regions corresponding to intersections of the data lines and the scanning lines on the substrate in plan view;
• forming the data lines above the thin film transistors;
• forming each of the storage capacitors in a region including a region facing a channel region of each of the thin film transistors in plan view above the substrate, such that a fixed-potential-side electrode, a dielectric film, and a pixel-potential-side electrode are stacked above the data lines in this order and at least one of the fixed-potential-side electrode and the pixel-potential-side electrode includes a first conductive light shielding film;
• and
• forming each of the pixel electrodes on each of the storage capacitors so as to be electrically coupled to each of the thin film transistors and the pixel-potential-side electrode for respective pixels defined in correspondence with the data lines and the scanning lines in plan view above the substrate.