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US 2006/0220028 A1Published application
Silicon on diamond-like carbon devices
AssigneeIntel Corporation
InventorsMohamad Shaheen, Kramadhati Ravi
Life of this patent
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Abstract
Embodiments of the invention provide substrate with an insulator layer on the substrate. The insulator layer may comprise diamond-like carbon. A device, such a tri-gate transistor may be formed on the diamond-like carbon layer.
Claims24
A device, comprising:
- a semiconductor substrate;
- a layer of diamond-like carbon on the substrate;
- and
- transistor on the layer of diamond-like carbon.
1 more element
A device, comprising:
- a semiconductor substrate;
- a layer of insulating material with a thermal conductivity in a range from about 0.5 W/cmK to about 1.0 W/cmK;
- and
- a transistor on the layer of insulating material.
1 more element
A device, comprising:
- a semiconductor substrate;
- an insulating layer on the substrate, the insulating layer having a top surface;
- a transistor on the insulating layer, the transistor comprising:
- a body on the insulating layer, the body having a top surface and laterally opposite sidewalls;
- a gate dielectric formed on the top surface and on the laterally opposite sidewalls;
- and
- a gate electrode formed on the gate dielectric;
- and
- wherein the top surface of the insulating layer under a center portion of the body is less than about 30 angstroms above the top surface of the insulating layer adjacent to the body, but not under the body or another transistor body.
6 more elements
A product, comprising:
- a semiconductor substrate;
- a layer of diamond-like carbon on the substrate;
- and
- a semiconductor device layer on the layer of diamond-like carbon.
1 more element
Dependencies are inferred from the claim text.