Semiconductor device, electronic apparatus, method of manufacturing semiconductor device, and method of manufacturing electronic apparatus
AssigneeSeiko Epson Corporation
InventorSoichi Moriya
Life of this patent
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Abstract
A semiconductor device includes first and second electrodes disposed apart from each other on a substrate, a gate electrode disposed so as to face the first and second electrodes and to cover at least part of each of the first and second electrodes, a semiconductor layer disposed between the first and second electrodes and the gate electrode, and a gate insulating layer disposed between the gate electrode and the semiconductor layer, the gate insulating layer having a film thickness that is greater in portions located directly above areas where the first and second electrodes are under the gate electrode than in a portion located directly above an area between the first and second electrodes.
Claims12
A semiconductor device, comprising:
- first and second electrodes disposed apart from each other on a substrate;
- a gate electrode disposed so as to face the first and second electrodes and to cover at least part of each of the first and second electrodes;
- a semiconductor layer disposed between the first and second electrodes and the gate electrode;
- and
- a gate insulating layer disposed between the gate electrode and the semiconductor layer;
- the gate insulating layer having a film thickness that is greater in portions located directly above areas where the first and second electrodes are under the gate electrode than in a portion located directly above an area between the first and second electrodes.
A semiconductor device, comprising:
- first and second electrodes formed on a substrate;
- a semiconductor layer formed to cover an area between the first and second electrodes on the first and second electrodes;
- a gate insulating layer formed on the semiconductor layer;
- and
- a gate electrode formed on the gate insulating layer;
- the gate electrode having portions that are directly above the first and second electrodes, and
- the gate insulating layer having a film thickness that is greater in portions located directly above areas where the first and second electrodes are under the gate electrode than in a portion located directly above an area between the first and second electrodes.
A method of manufacturing a semiconductor device, comprising:
- forming a first and second electrodes that are disposed apart from each other on a substrate;
- forming a semiconductor layer in an area between the first and second electrodes and on the first and second electrodes;
- forming a gate insulating layer so as to cover the semiconductor layer;
- and
- forming a gate electrode layer on the gate insulating layer;
- the gate insulating layer being formed to have a film thickness that is greater in portions located directly above areas where the first and second electrodes are under the gate electrode than in a portion located directly above an area between the first and second electrodes.
Dependencies are inferred from the claim text.