Back to results
US 2006/0220021 A1Published application
Method of manufacturing a semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Hisashi Ohtani, Hideto Ohnuma
Life of this patent
Estimating the term…
Abstract
There is provided a method of manufacturing a semiconductor device having a TFT with sufficient characteristics and little fluctuation by accurately controlling the addition amount of impurity ions to the semiconductor layer using an ion doping device. A semiconductor device having a TFT showing sufficient and stable characteristics may be obtained by increasing the ratio of the dopant amount in the doping gas and decreasing the ambient atmosphere components (C, N, O) and hydrogen to be simultaneously added with the impurity ions at the time of doping.
Claims36
A semiconductor device comprising:
- a pixel portion comprising a first thin film transistor over a substrate;
- a driver circuit comprising a second thin film transistor over the substrate;
- an interlayer insulating film over the first thin film transistor and the second thin film transistor wherein the interlayer insulating film has at least a first contact hole and a second contact hole;
- a pixel electrode formed over the interlayer insulating film and electrically connected to the first thin film transistor through the first contact hole;
- and
- a first spacer formed over the pixel electrode wherein the first spacer overlaps with the first contact hole,
- a wiring formed over the interlayer insulating film and electrically connected to the second thin film transistor through the second contact hole;
- and
- a second spacer formed over the interlayer insulating film wherein the second spacer is in direct contact with the wiring.
6 more elements
A semiconductor device comprising:
- a pixel portion comprising a first thin film transistor over a substrate;
- a driver circuit comprising a second thin film transistor over the substrate;
- an interlayer insulating film over the first thin film transistor and the second thin film transistor wherein the interlayer insulating film has at least a first contact hole and a second contact hole;
- a pixel electrode formed over the interlayer insulating film and electrically connected to the first thin film transistor through the first contact hole;
- and
- a first spacer formed over the pixel electrode wherein the first spacer overlaps with the first contact hole,
- a wiring formed over the interlayer insulating film and electrically connected to the second thin film transistor through the second contact hole;
- and
- a second spacer formed over the interlayer insulating film wherein the second spacer overlaps with the second contact hole.
6 more elements
A semiconductor device comprising:
- a pixel portion comprising a plurality of first thin film transistors over a substrate;
- a driver circuit comprising at least a second thin film transistor over the substrate;
- an interlayer insulating film over the first thin film transistors and the second thin film transistors wherein the interlayer insulating film has a plurality of first contact holes and at least a second contact hole;
- a plurality of pixel electrodes formed over the interlayer insulating film wherein each of the plurality of pixel electrodes is electrically connected to each of the first thin film transistors through each of the first contact holes respectively;
- and
- a plurality of first spacers formed over the pixel electrodes wherein each of the first spacers overlaps with each of the first contact holes respectively,
- a wiring formed over the interlayer insulating film and electrically connected to the second thin film transistor through the second contact hole;
- and
- a second spacer formed over the interlayer insulating film wherein the second spacer is in direct contact with the wiring,
- wherein a ratio of a number of the first spacers against a number of the pixel electrodes is set to be in the range from 20 to 100%.
7 more elements
A semiconductor device comprising:
- a pixel portion comprising a plurality of first thin film transistors over a substrate;
- a driver circuit comprising at least a second thin film transistor over the substrate;
- an interlayer insulating film over the first thin film transistors and the second thin film transistors wherein the interlayer insulating film has a plurality of first contact holes and at least a second contact hole;
- a plurality of pixel electrodes formed over the interlayer insulating film wherein each of the plurality of pixel electrodes is electrically connected to each of the first thin film transistors through each of the first contact holes respectively;
- and
- a plurality of first spacers formed over the pixel electrodes wherein each of the first spacers overlaps with each of the first contact holes respectively,
- a wiring formed over the interlayer insulating film and electrically connected to the second thin film transistor through the second contact hole;
- and
- a second spacer formed over the interlayer insulating film wherein the second spacer overlaps with the second contact hole,
- wherein a ratio of a number of the first spacers against a number of the pixel electrodes is set to be in the range from 20 to 100%.
7 more elements
A semiconductor device comprising:
- a pixel portion comprising a first thin film transistor over a substrate;
- a driver circuit comprising a second thin film transistor over the substrate;
- an interlayer insulating film over the first thin film transistor and the second thin film transistor wherein the interlayer insulating film has at least a first contact hole and a second contact hole;
- a pixel electrode formed over the interlayer insulating film and electrically connected to the first thin film transistor through the first contact hole;
- and
- a first spacer formed over the pixel electrode wherein the first spacer overlaps with the first contact hole,
- a wiring formed over the interlayer insulating film and electrically connected to the second thin film transistor through the second contact hole;
- and
- a second spacer formed over the interlayer insulating film wherein the second spacer is in direct contact with the wiring,
- wherein each of the first spacer and the second spacer has a flat top potion.
7 more elements
A semiconductor device comprising:
- a pixel portion comprising a first thin film transistor over a substrate;
- a driver circuit comprising a second thin film transistor over the substrate;
- an interlayer insulating film over the first thin film transistor and the second thin film transistor wherein the interlayer insulating film has at least a first contact hole and a second contact hole;
- a pixel electrode formed over the interlayer insulating film and electrically connected to the first thin film transistor through the first contact hole;
- and
- a first spacer formed over the pixel electrode wherein the first spacer overlaps with the first contact hole,
- a wiring formed over the interlayer insulating film and electrically connected to the second thin film transistor through the second contact hole;
- and
- a second spacer formed over the interlayer insulating film wherein the second spacer overlaps with the second contact hole,
- wherein each of the first spacer and the second spacer has a flat top potion.
7 more elements
Dependencies are inferred from the claim text.