Thin film transistor, flat panel display device, and method of fabricating the same
AssigneeSamsung Mobile Display Co., Ltd.
InventorEui-Hoon Hwang
Life of this patent
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Abstract
A thin film transistor, a flat panel display device including the same, and a method of fabricating the same. An uneven structure is formed at a part of a polycrystalline silicon layer pattern corresponding to a channel region to form a channel length at the edge of the channel region longer than a main channel length, so that a resistance at the edge of the channel region increases to cause an amount of current flowing through the edge of the channel region to decrease, thereby enhancing the reliability of a circuit at low voltage driving.
Claims17
A thin film transistor, comprising:
- a semiconductor layer pattern formed on a substrate;
- a gate electrode crossing a center of the semiconductor layer pattern;
- source and drain electrodes connected to the semiconductor layer pattern;
- and
- a channel region defined by an overlap of the semiconductor layer pattern and the gate electrode,
- wherein a channel length of an edge of the channel region is different from a channel length of a center of the channel region.
A thin film transistor, comprising:
- a semiconductor layer pattern formed on a substrate and having an uneven structure at an edge of a center of the semiconductor layer pattern;
- a gate electrode crossing the center of the semiconductor layer pattern;
- and
- source and drain electrodes connected to the semiconductor layer pattern.
A flat panel display device, comprising:
- a thin film transistor including a semiconductor layer pattern, a gate electrode crossing the semiconductor layer pattern, a channel region defined by a crossing of the semiconductor layer pattern and the gate electrode, and source and drain electrodes connected to the semiconductor layer pattern on a substrate;
- a pixel electrode connected to one of the source and drain electrodes;
- an organic layer including at least an emission layer and connected to the pixel electrode;
- and
- a common electrode connected to the organic layer,
- wherein a channel length of an edge of the channel region is different from a channel length of a center of the channel region.
A method of fabricating a flat panel display device, the method comprising:
- forming a semiconductor layer on a substrate;
- etching the semiconductor layer using a photolithography process to form a semiconductor layer pattern having an uneven structure at an edge of the semiconductor layer pattern;
- forming a gate insulating layer on an entire surface of the substrate;
- forming a gate electrode to cross the semiconductor layer pattern on the gate insulating layer;
- injecting impurity ions into the semiconductor layer pattern at both sides of the gate electrode to form source and drain regions;
- forming source and drain electrodes connected to the source and drain regions, respectively;
- forming a pixel electrode connected to one of the source and drain electrodes;
- forming an organic layer including at least an emission layer on the pixel electrode;
- and
- forming a common electrode on the organic layer.
Dependencies are inferred from the claim text.