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US 2006/0220015 A1Published application
Thin film transistor, thin film transistor display panel, and manufacturing method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorSoo-Guy Rho
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Abstract
A thin film transistor is provided. The thin film transistor includes a frame formed on a substrate and having a plurality of grooves, line-shaped semiconductors disposed in at least one of the grooves, a first electrode overlapping with the line-shaped semiconductors, and second and third electrodes connected to ends of the line-shaped semiconductors.
Claims20
A thin film transistor comprising:
- a frame formed on a substrate and having a plurality of grooves;
- a line-shaped semiconductor disposed in at least one of the grooves;
- a first electrode overlapping with the line-shaped semiconductor;
- second and third electrodes connected to ends of the line-shaped semiconductor.
1 more element
A thin film transistor display panel comprising:
- a substrate;
- a frame formed on the substrate and having a plurality of grooves;
- a line-shaped semiconductor disposed in at least one of the grooves;
- a gate line overlapping the line-shaped semiconductor;
- a data line and a drain electrode connected to ends of the line-shaped semiconductor;
- and
- a pixel electrode connected to the drain electrode.
4 more elements
A method of manufacturing a thin film transistor display panel, comprising steps of:
- forming a frame having a plurality of grooves on a substrate;
- disposing line-shaped semiconductors into the grooves;
- forming a gate line overlapping with the line-shaped semiconductors;
- forming a data line and a drain electrode insulated from the gate line and intersecting the gate line, wherein the data line and the drain electrode are connected to ends of the line-shaped semiconductors;
- and
- forming a pixel electrode connected to the drain electrode.
3 more elements
Dependencies are inferred from the claim text.