Tft having a fluorocarbon-containing layer

A thin film transistor comprising:

• (a) a semiconductor layer including a thiophene compound, wherein the thiophene compound comprises one or more substituted thiophene units, one or more unsubstituted thiophene units, and optionally one or more divalent linkages, wherein the thiophene compound is a polymer;
• (b) a gate dielectric;
• and
• (c) a layer contacting the gate dielectric disposed between the semiconductor layer and the gate dielectric, wherein the layer comprises a fluoroalkylsilane or a fluoroalkylphosphine, or a mixture thereof.

A process for fabricating a thin film transistor comprising:

• (a) forming a gate dielectric;
• (b) forming a layer including a substance comprising a fluorocarbon structure;
• and
• (c) forming a semiconductor layer including a thiophene compound comprising one or more substituted thiophene units, one or more unsubstituted thiophene units, and optionally one or more divalent linkages,
• wherein the layer contacts the gate dielectric and is disposed between the semiconductor layer and the gate dielectric.