Acene compounds having a single terminal fused thiophene as semiconductor materials for thin film transistors and methods of making the same

A process for fabricating a thin film semiconductor device, comprising, not necessarily in the following order, the steps of:

• (a) depositing, onto a substrate, a thin film of organic semiconductor material comprising an acene compound comprising a linear configuration of at least three fused benzene rings, which compound has, at one end only of the linear configuration, a terminal ring that is a fused substituted or unsubstituted thiophene, fused on its b side to an adjacent fused benzene ring in the acene compound, such that the thin film of organic semiconductor material exhibits a field effect electron mobility that is greater than 0.01 cm2/Vs;
• (b) forming a spaced apart source electrode and drain electrode, wherein the source electrode and the drain electrode are separated by, and electrically connected with, the n-channel semiconductor film;
• and
• (c) forming a gate electrode spaced apart from the semiconductor material.