Semiconductor laser having optical guide layer doped for decreasing resistance
AssigneeFuji Photo Film Co., Ltd.
InventorTsuyoshi Ohgoh
Life of this patent
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Abstract
In a semiconductor laser element: a lower cladding layer of a first conductivity type, a quantum-well active layer, an upper cladding layer of a second conductivity type, a contact layer of the second conductivity type, and a first electrode of the second conductivity type are formed in this order above a surface of a semiconductor substrate of the first conductivity type, and a second electrode of the first conductivity type is formed below the lower cladding layer. An optical guide layer is arranged between the quantum-well active layer and one or each of the lower cladding layer and the upper cladding layer. The whole or a portion of the optical guide layer contains a dopant so as to realize a carrier concentration of 3.0×1017 cm−3 or higher.
Claims5
A semiconductor laser element comprising:
- a semiconductor substrate of a first conductivity type;
- a lower cladding layer of the first conductivity type formed above a surface of said semiconductor substrate;
- an optical guide layer formed above said lower cladding layer;
- a quantum-well active layer formed above said optical guide layer;
- an upper cladding layer of a second conductivity type formed above said quantum-well active layer;
- a contact layer of the second conductivity type formed above said upper cladding layer;
- a first electrode of the first conductivity type formed below said lower cladding layer;
- and
- a second electrode of the second conductivity type formed on said contact layer;
- wherein said optical guide layer has a first bandgap smaller than a second bandgap which said lower cladding layer has, and the whole or a portion of the optical guide layer contains a dopant so as to realize a carrier concentration of 3.0×1017 cm−3 or higher.
A semiconductor laser element comprising:
- a semiconductor substrate of a first conductivity type;
- a lower cladding layer of the first conductivity type formed above a surface of said semiconductor substrate;
- a quantum-well active layer formed above said lower cladding layer;
- an optical guide layer formed above said quantum-well active layer;
- an upper cladding layer of a second conductivity type formed above said optical guide layer;
- a contact layer of the second conductivity type formed above said upper cladding layer;
- a first electrode of the first conductivity type formed below said lower cladding layer;
- and
- a second electrode of the second conductivity type formed on said contact layer;
- wherein said optical guide layer has a first bandgap greater than a second bandgap which said quantum-well active layer has, and the whole or a portion of the optical guide layer contains a dopant so as to realize a carrier concentration of 3.0×1017 cm−3 or higher.
Dependencies are inferred from the claim text.