Semiconductor device and fabrication method of the same
AssigneeEudyna Devices Inc.
InventorsTakeshi Kawasaki, Ken Nakata, Seiji Yaegashi
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Abstract
A semiconductor device includes a substrate, a SiC drift layer formed above the substrate, a GaN-based semiconductor layer that is formed on the SiC drift layer and includes a channel layer, a source electrode and a gate electrode formed on the GaN-based semiconductor layer, current blocking regions formed in portions of the SiC drift layer and located below the source and gate electrodes, and a drain electrode formed on a surface that opposes the GaN-based semiconductor layer across the SiC layer.
Claims23
A semiconductor device comprising:
- a substrate;
- a SiC drift layer formed above the substrate;
- a GaN-based semiconductor layer that is formed on the SiC drift layer and includes a channel layer;
- a source electrode and a gate electrode formed on the GaN-based semiconductor layer;
- current blocking regions formed in portions of the SiC drift layer and located below the source and gate electrodes;
- and
- a drain electrode formed on a surface that opposes the GaN-based semiconductor layer across the SiC layer.
A semiconductor device comprising:
- a substrate;
- a SiC drift layer formed above the substrate and composed of a p-type SiC layer, the SiC drift layer having an opening region deeper than the SiC drift layer;
- a GaN-based semiconductor layer formed on the SiC drift layer;
- a source or emitter electrode and a gate electrode formed on the GaN-based semiconductor layer;
- and
- a drain electrode formed on a surface that opposes the GaN-based semiconductor layer across the SiC layer.
A semiconductor device comprising:
- a substrate;
- a SiC drift layer formed above the substrate;
- a GaN-based semiconductor layer that is formed on the SiC drift layer, and includes a channel layer and an opening region deeper than the channel layer;
- a cap layer that is formed on a side surface of the channel layer in the opening region and has a band gap wider than that of the channel layer;
- a gate electrode formed on the cap layer and located in the opening region;
- a source or emitter electrode formed on the GaN-based semiconductor layer;
- and
- a drain electrode formed on a surface that opposes the GaN-based semiconductor layer across the SiC layer.
A method of fabricating a semiconductor device comprising:
- forming a SiC drift layer on a substrate;
- forming p-type SiC regions in the SiC drift layer;
- forming a GaN-based semiconductor layer on the SiC drift layer;
- forming gate electrodes on the GaN-based semiconductor layer so as to be located above the p-type SiC regions;
- forming source electrodes on the GaN-based semiconductor layer so as to be located above the p-type SiC regions;
- and
- forming a drain electrode formed on a surface that opposes the GaN-based semiconductor layer across the SiC layer.
A method of fabricating a semiconductor device comprising:
- forming a SiC drift layer including p-type SiC layer on a substrate;
- forming an opening region in the SiC drift layer by removing at least the p-type SiC layer;
- forming a GaN-based semiconductor layer on the SiC drift layer including the opening region;
- forming gate electrodes on the p-type SiC layer of the GaN-based semiconductor layer;
- forming source or emitter electrodes on the p-type SiC layer of the GaN-based semiconductor layer;
- and
- forming a drain electrode formed on a surface that opposes the GaN-based semiconductor layer across the SiC layer.
A method of fabricating a semiconductor device comprising:
- forming a SiC drift layer on a substrate;
- forming a GaN-based semiconductor layer including a channel layer on the SiC drift layer;
- forming an opening region in the GaN-based semiconductor layer by removing at least the channel layer;
- forming a cap layer on a side surface of the channel layer in the opening region;
- forming a gate electrode above the side surface of the channel layer through the cap layer in the opening region;
- forming a source or emitter electrode on the GaN-based semiconductor layer;
- and
- forming a drain electrode formed on a surface that opposes the GaN-based semiconductor layer across the SiC layer.
Dependencies are inferred from the claim text.