Laser produced plasma EUV light source
AssigneeCymer, Inc.
InventorsAlexander Ershov, William Partlo, Norbert Bowering, Bjorn Hansson
Life of this patent
Estimating the term…
Abstract
An EUV light source is disclosed that may include a laser source, e.g. CO2 laser, a plasma chamber, and a beam delivery system for passing a laser beam from the laser source into the plasma chamber. Embodiments are disclosed which may include one or more of the following; a bypass line may be provided to establish fluid communication between the plasma chamber and the auxiliary chamber, a focusing optic, e.g. mirror, for focusing the laser beam to a focal spot in the plasma chamber, a steering optic for steering the laser beam focal spot in the plasma chamber, and an optical arrangement for adjusting focal power.
Claims83
An EUV light source comprising;
- a laser source;
- a plasma chamber;
- and
- a beam delivery system having at least one auxiliary chamber, said auxiliary chamber having an input window for passing a laser beam from the laser source into the auxiliary chamber and an exit window for passing the laser beam into said plasma chamber.
An EUV light source comprising;
- a laser source;
- a plasma chamber;
- and
- a focusing mirror for focusing a laser beam from said laser source to a focal spot within said plasma chamber.
An EUV light source comprising;
- a laser source;
- a plasma chamber;
- a focusing optic for focusing a laser beam from said laser source to a focal spot within said plasma chamber;
- and
- an actuator moving said focusing optic to selectively move the focal point within the plasma chamber.
An EUV light source comprising;
- a laser source;
- a plasma chamber;
- a focusing optic for focusing a laser beam from said laser source to a focal spot within said plasma chamber;
- and
- an optical assembly to adjust a focal power of said focal spot.
A light source producing EUV by plasma formation of a material, said light source generating debris by plasma formation, said light source comprising:
- a plasma chamber;
- a CO2 laser source producing a laser beam having a wavelength, λ;
- a laser input window for said plasma chamber,
- a source for introducing an etchant for the plasma formation material into the plasma chamber,
- a subsystem heating deposited plasma formation material on the window to an elevated temperature, t, to increase a rate of a chemical reaction between deposited plasma formation material and the etchant;
- and
- wherein said window is substantially transparent to said wavelength, λ, and said window has a surface, said surface being chemically stable when exposed to said etchant at said temperature, t.
An LPP EUV light source comprising:
- a laser source generating a laser beam;
- a source material droplet generator to generate droplets for exposure to said laser beam and produce an EUV emission;
- a detector for measuring an angular EUV emission distribution and outputting a signal indicative thereof;
- and
- a control system responsive to said signal to increase a coupling between said laser beam and said droplets.
Dependencies are inferred from the claim text.