Plasma ion implantation systems and methods using solid source of dopant material
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsSandeep Mehta, Steven Walther, Naushad Variam
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Abstract
Plasma ion implantation apparatus includes a process chamber, a platen located in the process chamber for supporting a substrate, a dopant source including a solid dopant element and a vaporizer to vaporize dopant material from the solid dopant element, a plasma source to produce a plasma containing ions of the dopant material, and an implant pulse source to apply implant pulses to the platen for accelerating the ions of the dopant material from the plasma into the substrate.
Claims23
Plasma ion implantation apparatus comprising:
- a process chamber;
- a platen located in said process chamber to support a substrate;
- a dopant source including a solid dopant element and a vaporizer to vaporize dopant material from the solid dopant element;
- a plasma source to produce a plasma containing ions of the dopant material;
- and
- an implant pulse source to apply implant pulses to said platen for accelerating the ions of the dopant material from the plasma into the substrate.
A method for plasma ion implantation of a substrate, comprising:
- providing a plasma ion implantation system including a process chamber and a platen to support a substrate in the process chamber;
- vaporizing dopant material from a solid dopant element;
- generating a plasma containing ions of the vaporized dopant material;
- and
- accelerating the ions of the dopant material from the plasma into the substrate.
Dependencies are inferred from the claim text.