Charged particle beam exposure equipment and charged particle beam exposure method
OwnerHideaki Komamiinventor
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Abstract
A charged particle beam exposure equipment includes an exposure module for exposing a resist film, to which an antistatic film is adhered, by means of irradiating a charged particle beam on the resist film, and a post-exposure wafer processing module for process a post-exposure wafer, which includes antistatic film removing means which detaches the antistatic film after exposure; baking means which causes the wafer to undergo a baking process; and post-exposure wafer process controlling means which transfers the post-exposure wafer to the antistatic film removing means, and which causes the antistatic film removing means to remove the antistatic film from the post-exposure wafer, thereafter transferring the resultant wafer to the baking means.
Claims13
Charged particle beam exposure equipment including an exposure module for exposing a resist film, to which an antistatic film is adhered, by irradiating a charged particle beam on the resist film, and a post-exposure wafer processing module for processing a post-exposure wafer, wherein the post-exposure wafer processing module comprises:
- antistatic film removing means which detaches the antistatic film after exposure;
- baking means which causes the wafer to undergo a baking process;
- and
- post-exposure wafer process controlling means which transfers the post-exposure wafer to the antistatic film removing means, and which causes the antistatic film removing means to remove the antistatic film from the post-exposure wafer, thereafter transferring the resultant wafer to the baking means.
A post-exposure wafer processing module comprising:
- antistatic film removing means which detaches an antistatic film which is adhered to a resist film;
- baking means which causes a wafer to undergo a baking process;
- and
- post-exposure wafer process controlling means which transfers the post-exposure wafer to the antistatic film removing means, and which causes the antistatic film removing means to remove the antistatic film from the post-exposure wafer, thereafter transferring the resultant wafer to the baking means.
A charged particle beam exposure method, comprising the steps of:
- exposing a resist film, on whose front surface an antistatic film has been formed, by means of irradiating a charged particle beam the resist film, and forming a desired pattern on the resist film;
- removing the antistatic film;
- and
- performing a baking process of heating the resist film after the antistatic film is removed.
Dependencies are inferred from the claim text.