High conductance ion source

A method for changing source materials in an ion implantation system, the method comprising:

• providing an ion source chamber having an extraction aperture and one or more diffusion apertures associated therewith;
• providing a first ionizable material to the ion source chamber;
• forming a first plasma from the first ionizable material, wherein ions from the first ionizable material are both extracted through the extraction aperture and deposited onto an interior surface of the ion source chamber;
• providing a second ionizable material to the ion source chamber;
• forming a second plasma from the second ionizable material, wherein ions from the second ionizable material are both extracted through the extraction aperture and sputter the interior surface of the ion source chamber, therein dislodging the first ionizable material from the interior surface of the ion source chamber;
• and
• diffusing the first ionizable material that has been dislodged from the interior surface of the ion source chamber through the extraction aperture and the one or more diffusion apertures.