Lithographic apparatus, device manufacturing method, and device manufactured thereby
AssigneeASML Netherlands B.V.
InventorsJan Van Der Werf, Mark Kroon, Wilhelmus Keur, Vadim Banine, Hans Van Der Laan, Johannes Moors, Erik Loopstra
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Abstract
A radiation sensor for use with a lithographic apparatus is disclosed, the radiation sensor comprising a radiation-sensitive material which converts incident radiation of wavelength λ1 into secondary radiation; and sensing means capable of detecting the secondary radiation emerging from said layer.
Claims25
A radiation sensor to detect radiation in a lithographic apparatus, comprising:
- a radiation-sensitive material configured to convert ultraviolet radiation having a wavelength smaller than 50 nm into secondary radiation;
- and
- a detector constructed and arranged to detect the secondary radiation emerging from the radiation-sensitive material,
- wherein intensity of the secondary radiation is used to determine intensity of the ultraviolet radiation.
A radiation sensor to detect radiation in a lithographic apparatus, comprising:
- a collector configured to collect secondary radiation from a radiation-sensitive material that emits secondary radiation when exposed to ultraviolet radiation having a wavelength smaller than 50 nm;
- and
- a measuring device constructed and arranged to measure the secondary radiation emerging from the radiation-sensitive material to determine an intensity of the ultraviolet radiation.
An image sensor configured to detect a patterned ultraviolet radiation in a lithographic apparatus, comprising:
- a patterned layer of material configured to receive the patterned ultraviolet radiation, the ultraviolet radiation having a wavelength smaller than 50 nm;
- a radiation-sensitive material configured to receive at least a portion of the ultraviolet radiation from the patterned layer and to emit secondary radiation in response thereto;
- and
- a detector constructed and arranged to detect the secondary radiation emerging from the radiation-sensitive material and to determine an optical or spatial characteristic of the patterned ultraviolet radiation based upon the detected secondary radiation.
Dependencies are inferred from the claim text.