Length measurement pattern, semiconductor device, and method of manufacturing a semiconductor device
AssigneeNEC Electronics Corporation
InventorRyuichi Okamura
Life of this patent
Estimating the term…
Abstract
A length measurement pattern is used for forming a contact and a via on a diffusion layer and on a lower layer interconnect, respectively, with a photoresist. The length measurement pattern includes a first pattern 16 serving as an object of length measurement in length measurement SEM and a second pattern 17 disposed to be spaced apart from the first pattern 16 and used for positioning and focusing of the length measurement SEM.
Claims19
A length measurement pattern disposed in a resist pattern and used for dimension measurement of said resist pattern by length measurement SEM, wherein said length measurement pattern includes:
- a first pattern serving as an object of length measurement by the length measurement SEM;
- and
- a second pattern disposed to be spaced apart from said first pattern and used for positioning and focusing of the length measurement SEM.
A semiconductor device comprising a length measurement pattern for forming a contact and a via on a diffusion layer and on a lower layer interconnect, respectively, with a photoresist,
- wherein said length measurement pattern includes:
- a first pattern serving as an object of length measurement by length measurement SEM;
- and
- a second pattern disposed to be spaced apart from said first pattern and used for positioning and focusing of the length measurement SEM.
A method of manufacturing a semiconductor device by forming a contact and a via on a diffusion layer and on a lower layer interconnect, respectively, with a photoresist, wherein said method includes:
- focusing length measurement SEM on a second pattern disposed to be spaced apart from a first pattern serving as an object of length measurement by the length measurement SEM and used for positioning and focusing of the length measurement SEM;
- and
- moving a field of view of the length measurement SEM to a region where said first pattern is disposed, so as to perform the length measurement of said first pattern.
Dependencies are inferred from the claim text.