Wafer characteristics via reflectometry and wafer processing apparatus and method
AssigneeMidwest Research Institute
InventorBhushan Sopori
Life of this patent
Estimating the term…
Abstract
An exemplary system includes a measuring device to acquire non-contact thickness measurements of a wafer and a laser beam to cut the wafer at a rate based at least in part on one or more thicknesses measurements. An exemplary method includes illuminating a substrate with radiation, measuring at least some radiation reflected from the substrate, determining one or more cutting parameters based at least in part on the measured radiation and cutting the substrate using the one or more cutting parameters. Various other exemplary methods, devices, systems, etc., are also disclosed.
Claims43
A system comprising:
- a measuring device to acquire non-contact thickness measurements of a wafer;
- and
- a laser beam to cut the wafer at a rate based at least in part on one or more thicknesses measurements.
A method comprising:
- measuring thickness of a wafer based at least in part on reflectance;
- determining a rate;
- and
- cutting a wafer at the rate using a laser beam.
A method comprising:
- providing a substrate;
- illuminating the substrate with radiation;
- measuring at least some radiation reflected from the substrate;
- determining one or more cutting parameters based at least in part on the reflectance of the measured radiation in a selected wavelength band;
- and
- cutting the substrate using the one or more cutting parameters.
An assembly comprising:
- a walled reflectometer chamber comprising a base opening that defines a horizon, one or more radiation sources positioned at an altitudinal angle equal to or greater than approximately 70° from the horizon to emit radiation to the base opening;
- and
- a laser that emits a laser beam capable of cutting a wafer at a rate wherein the rate is based at least in part on radiation from the one or more radiation sources being reflected from the wafer.
An assembly comprising:
- a walled reflectometer chamber comprising a base opening that defines a horizon, one or more radiation sources positioned at an altitudinal angle equal to or greater than approximately 70° from the horizon to emit radiation to the base opening;
- and
- a laser that emits a laser beam capable of cutting a wafer wherein power of the laser beam is based at least in part on radiation from the one or more radiation sources being reflected from the wafer.
A reflectometer comprising:
- a walled chamber having an aperture;
- a substantially annular radiation source to direct radiation in the chamber and to the aperture;
- and
- a collector to collect reflected radiation that passes in to the chamber via the aperture.
A reflectometer comprising:
- a lens;
- a substantially annular radiation source;
- and
- a collector wherein the lens directs radiation from the radiation source to a substrate and reflected radiation from the substrate to the collector.
A reflectometer comprising:
- a radiation source;
- a collector;
- a filter;
- and
- a lens to direct radiation from the radiation source to a substrate and to direct reflected radiation from the substrate to the collector via the filter.
A reflectometer comprising:
- a walled chamber having a reflective inner wall surface and an aperture wherein the walled chamber has a shape that acts to focus radiation from a radiation source through the aperture;
- and
- a collector positioned in the chamber to collect radiation that passes through the aperture and into the chamber.
A system comprising:
- a reflectometer that comprises a radiation source to illuminate a substrate with radiation and a collector to collect radiation reflected from the illuminated substrate;
- and
- control logic to control a thin film deposition process based at least in part on the collected radiation.
A system comprising:
- a reflectometer that comprises a radiation source to illuminate a substrate with radiation and a collector to collect radiation reflected from the illuminated substrate;
- and
- control logic to control a crystal growth process based at least in part on the collected radiation.
Dependencies are inferred from the claim text.