Metal CMP process on one or more polishing stations using slurries with oxidizers

A method for removing at least a metal material from a surface of the substrate, comprising:

• disposing the substrate on an electrochemical mechanical planarization station;
• and
• polishing the substrate by a full sequence planarization technique, comprising:
• applying a first polishing composition having a first oxidizer to the surface of the substrate to remove at least a portion of the metal material;
• polishing the substrate at a first removal rate;
• applying a second polishing composition having a second oxidizer comprising a peroxide oxidizer to the surface of the substrate to remove a residual portion of the metal material;
• and
• polishing the substrate at a second removal rate.

A method for removing at least a metal material from a surface of the substrate, comprising:

• polishing the substrate by a hybrid planarization technique, comprising:
• disposing the substrate on a first planarization station;
• applying a first polishing composition having a first oxidizer comprising a persulfate oxidizer to the surface of the substrate to remove at least a portion of the metal material;
• polishing the substrate at a first removal rate;
• transferring the substrate to a second planarization station;
• applying a second polishing composition having a second oxidizer to the surface of the substrate to remove a residual portion of the metal material;
• and
• polishing the substrate at a second removal rate.

A method for removing at least a metal material from a surface of the substrate, comprising:

• polishing the substrate by a hybrid planarization technique, comprising:
• disposing the substrate on a chemical mechanical planarization station;
• applying a first polishing composition to the surface of the substrate to remove at least a portion of the metal material;
• polishing the substrate at a first polishing pressure and first removal rate until a first end point is detected by an end point detection module connected to the chemical mechanical planarization station;
• transferring the substrate to an electrochemical mechanical planarization station;
• applying a second polishing composition to the surface of the substrate to remove a residual portion of the metal material;
• and
• polishing the substrate at a second polishing pressure and a second removal rate until the surface of the substrate is planarized.

A method for removing at least a metal material from a surface of the substrate, comprising:

• disposing the substrate on a planarization station;
• applying a first polishing composition comprising ammonium persulfate to the surface of the substrate to remove at least a portion of the metal material;
• polishing the substrate at a first removal rate;
• applying a second polishing composition comprising hydrogen peroxide to the surface of the substrate to remove a residual portion of the metal material;
• and
• polishing the substrate at a second removal rate.