Photovoltaic device and manufacturing method of photovoltaic device
AssigneeSanyo Electric Co., Ltd.
InventorsToshio Asaumi, Toshiaki Baba, Akira Terakawa, Yasufumi Tsunomura
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Abstract
Solar cells and methods of their manufacture are described that exhibit decreased or eliminated leak current, improved open voltage and improved fill factor characteristics. In an embodiment, a separate processed surface is interposed between a first and a second main surface of a crystal substrate, as prepared by laser irradiation and cut processing. The laser irradiation is applied to an amorphous semiconductor layer of the same conductive type as an underlying single crystal substrate, but does not penetrate an underlying amorphous opposite type layer. Details of lamination and laser characteristics for processing the layers are provided.
Claims14
A photovoltaic device comprising a crystalline semiconductor substrate of first conductive type including a first main surface and a second main surface provided on opposite side of the first main surface, and a semiconductor layer of second conductive type provided on the first main surface, wherein,
- the crystalline semiconductor substrate includes a separate processed side surface formed by separating process, interposed between the first main surface and the second main surface,
- the separate processed side surface includes a laser processed region formed by laser process and a cut processed region formed by cutting process,
- the laser processed region is a region extending from the second main surface toward the first main surface side without reaching the semiconductor layer of second conductive type.
A manufacturing method of a photovoltaic device comprising a crystalline semiconductor substrate of first conductive type including a first main surface and a second main surface provided on the opposite side of the first main surface, comprising the steps of:
- (a) forming a semiconductor layer of second conductive type on the first main surface of crystalline semiconductor substrate,
- (b) forming a trench extending form the second main surface toward the first main surface side without reaching the semiconductor layer of second conductive type, by irradiating laser beam from the second main surface of the crystalline semiconductor substrate,
- (c) separating the crystalline semiconductor substrate and the semiconductor layer of second conductive type by cutting the crystalline semiconductor substrate and the semiconductor layer of second conductive type along the trench.
Dependencies are inferred from the claim text.