Process and photovoltaic device using an akali-containing layer
AssigneeDayStar Technologies, Inc.
InventorJohn Tuttle
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Abstract
This invention describes the product and method of developing a photovoltaic device using an alkali-containing mixed phase semiconductor source layer to enhance cell efficiency and minimize molecular structure defects.
Claims78
1) A mixed phase semiconductor source layer for a photovoltaic device comprising a semiconductor layer and alkali materials wherein the semiconductor layer and the alkali materials are separately synthesized, and then mixed, and then deposited on a substrate.
8) A mixed phase semiconductor source layer for a photovoltaic device comprising a semiconductor layer and alkali materials wherein the semiconductor layer and the alkali materials are separately synthesized, and then co-deposited on a substrate.
15) A mixed phase semiconductor source layer for a photovoltaic device comprising a semiconductor layer and alkali materials wherein the semiconductor layer and the alkali materials are co-deposited on a substrate and then synthesized into an alloy mixture.
22) A mixed phase semiconductor source layer for a photovoltaic device comprising a semiconductor layer and alkali materials wherein the semiconductor layer and the alkali materials are sequentially deposited and then synthesized into an alloy mixture.
29) A mixed phase semiconductor source layer for a photovoltaic device comprising a semiconductor layer and alkali materials wherein the semiconductor layer and the alkali materials are synthesized separately, sequentially deposited on a substrate, and then alloyed with a thermal treatment.
36) A method for the creation of a mixed phase semiconductor source layer for a photovoltaic device formed by depositing chemical alloy layers comprising alkali materials and an semiconductor layer formed by the delivery of type I, III and VI metals, where said alkali materials and said semiconductor layer are deposited upon a substrate.
42) A photovoltaic device made by providing a stainless steel foil substrate to an apparatus for treating the substrate, where the treating is deposition of a plurality of thin layers comprising of a back contact layer, a mixed phase semiconductor source layer, an precursor p-type absorber layer, an n-type junction layer, an intrinsic transparent oxide layer and an conducting transparent oxide layer.
44) A method for the creation of an mixed phase semiconductor source layer wherein alkali materials and a semiconductor layer are separately synthesized, and then mixed, and then deposited on a substrate.
51) A method for the creation of an mixed phase semiconductor source layer wherein alkali materials and a semiconductor layer are separately synthesized, and then co-deposited on a substrate.
58) A method for the creation of an mixed phase semiconductor source layer wherein alkali materials and a semiconductor layer are co-deposited on a substrate and then synthesized into an alloy mixture.
65) A method for the creation of an mixed phase semiconductor source layer wherein alkali materials and a semiconductor layer are sequentially deposited and then synthesized into an alloy mixture.
72) A method for the creation of an mixed phase semiconductor source layer wherein alkali materials and a semiconductor layer are synthesized separately, sequentially deposited on a substrate, and then alloyed with a thermal treatment.
Dependencies are inferred from the claim text.