Method of cleaning a semiconductor wafer
AssigneeHynix Semiconductor Inc.
InventorsHoon Oh, Woo Kim, Baik Choi, Hyo Yoon, Hyo Yoon, Pyeong Oh
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Abstract
A method of cleaning a semiconductor wafer, including the steps of supplying a mixed solution of a dilute hydrofluoric acid solution and hydrogen peroxide solution to a bath; loading the semiconductor wafer into the bath such that the semiconductor wafer is dipped into the mixed solution, and rinsing the semiconductor wafer with the mixed solution; draining the mixed solution and supplying deionized water to the bath, and rinsing the semiconductor wafer with the deionized water; and draining the deionized water and supplying isopropyl alcohol to the bath, and drying the semiconductor wafer with isopropyl alcohol.
Claims25
A method of cleaning a semiconductor wafer, comprising the steps of:
- supplying a mixed solution of a dilute hydrofluoric acid solution and a hydrogen peroxide solution to a bath;
- loading a semiconductor wafer into the bath and dipping the semiconductor wafer into the mixed solution, rinsing the semiconductor wafer with the mixed solution;
- draining the mixed solution and supplying deionized water to the bath, rinsing the semiconductor wafer with the deionized water;
- and
- draining the deionized water and supplying isopropyl alcohol to the bath, drying the semiconductor wafer with the isopropyl alcohol.
A method of cleaning a semiconductor wafer, comprising the steps of finally rinsing a semiconductor wafer having an exposed metal-containing layer with a mixed solution of a dilute hydrofluoric acid solution and a hydrogen peroxide solution.
Dependencies are inferred from the claim text.