Hdp-cvd seasoning process for high power hdp-cvd gapfil to improve particle performance

A substrate processing system comprising:

• a housing for forming a vacuum chamber having an interior surface;
• a gas delivery system for introducing a seasoning gas into said vacuum chamber, wherein the gas delivery system comprises one or more aluminum nitride nozzles exposed to the vacuum chamber;
• a controller, operatively coupled to control said gas delivery system;
• and
• a memory operatively coupled to said controller, comprising a computer-readable medium having a computer-readable program embodied therein for directing operation of said processing system, said computer-readable program comprising:
• a set of instructions for, prior to a substrate processing operation, controlling said gas delivery system to flow the seasoning gas that has an oxygen to silane ratio greater than or equal to about 1.6:1 to deposit a silicon oxide film on the aluminum nitride nozzles.

A substrate processing system comprising:

• a housing for forming a vacuum chamber having an interior surface;
• a gas delivery system for introducing a seasoning gases into said vacuum chamber, wherein the gas delivery system comprises one or more aluminum nitride nozzles exposed to the vacuum chamber;
• a plasma generating system to generate a plasma from the seasoning gas;
• a controller, operatively coupled to control said gas delivery system;
• and
• a memory operatively coupled to said controller, comprising a computer-readable medium having a computer-readable program embodied therein for directing operation of said processing system, said computer-readable program comprising:
• a set of instructions for, prior to a substrate processing operation, controlling said gas delivery system to flow the seasoning gases that have an oxygen to silane ratio greater than or equal to about 1.6:1 into the chamber and strike a plasma, wherein the plasma deposits a silicon oxide film on the aluminum nitride nozzles.

A substrate processing system comprising:

• a housing for forming a vacuum chamber having an interior surface;
• a gas delivery system for introducing an etchant gas and a seasoning gas into said vacuum chamber, wherein the seasoning gas has an oxygen to silane ratio greater than or equal to about 1.6:1, and wherein the gas delivery system comprises one or more aluminum nitride nozzles exposed to the vacuum chamber;
• a plasma generating system to generate a plasma from the seasoning gas;
• a controller, operatively coupled to control said gas delivery system;
• and
• a memory operatively coupled to said controller, comprising a computer-readable medium having a computer-readable program embodied therein for directing operation of said processing system, said computer-readable program comprising:
• a set of instructions for, prior to a substrate processing operation, controlling said gas delivery system to flow the etchant gas into the chamber to clean the interior of the chamber, and then form a plasma from the seasoning gas that deposits a silicon oxide film on the aluminum nitride nozzles.