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US 2006/0219167 A1Published application
Apparatus and method of vacuum metallic sintering for a semiconductor
AssigneeLite-On Semiconductor Corp.
InventorsHung-Lung Cheng, Hui-Chung Wu, Chi-Chen Lee
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Abstract
An apparatus and method of vacuum metallic sintering for a semiconductor uses a quartz tube, a vacuum air-extracting apparatus, a furnace and a gas injection pipe. The metal sintered does not produce metal oxide in a vacuum established by the vacuum air-extracting apparatus. After sintering, a movable furnace can withdraw from the quartz tube immediately to decrease cooling time.
Claims4
An apparatus of vacuum metallic sinter sintering for a semiconductor, comprising:
- a quartz tube accommodating a wafer;
- a vacuum air-extracting apparatus having a vacuum piping connected to the quartz tube for evacuating air from the quartz tube;
- a gas injection pipe communicating with the quartz tube for transporting process gas;
- and
- a furnace movably accommodating the quartz tube for heating the wafer;
- wherein the wafer is sintered in a vacuum to avoid production of metal oxide.
3 more elements
A method of vacuum metallic sintering for a semiconductor, comprising:
- placing a wafer in a quartz tube;
- evacuating air from the quartz tube;
- moving a furnace to accommodate movably the quartz tube and a corresponding position of the wafer;
- heating and sintering the wafer in a vacuum;
- and
- injecting a process gas into the quartz tube to prevent production of metal oxide.
3 more elements
Dependencies are inferred from the claim text.