Oxide films containing titanium
OwnerAntti Rahtu, Raija Matero +5inventors
InventorsAntti Rahtu, Raija Matero, Markku Leskela, Mikko Ritala, Timo Hatanpaa, Timo Hanninen, Marko Vehkamaki
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Abstract
Atomic layer deposition (ALD) type processes for producing titanium containing oxide thin films comprise feeding into a reaction space vapour phase pulses of titanium alkoxide as a titanium source material and at least one oxygen source material, such as ozone, capable of forming an oxide with the titanium source material. In preferred embodiments the titanium alkoxide is titanium methoxide.
Claims21
An atomic layer deposition process for producing titanium containing oxide thin films comprising alternately contacting a substrate in a reaction space with vapor phase pulses of a titanium alkoxide and at least one oxygen source material.
A atomic layer deposition type process for depositing a multicomponent oxide thin film comprising titanium, the process comprising contacting a substrate with alternate and sequential vapor phase pulses of a metal precursor and an oxygen source material, wherein the metal precursor is a titanium alkoxide compound and the oxygen source material is ozone.
A method for growing a thin film comprising barium, strontium and titanium on a substrate in a reaction chamber by atomic layer deposition, wherein a first growth cycle comprises:
- feeding a first reactant pulse into the reaction chamber, wherein the first reactant is a titanium methoxide compound;
- removing the first reactant from the reaction chamber with the aid of an inert gas;
- feeding an oxygen source material into the reaction space, wherein the second reactant is ozone;
- and
- removing excess second reactant from the reaction chamber with the aid of an inert gas.
Dependencies are inferred from the claim text.