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US 2006/0217259 A1Published application
Aluminum nitride sintered body, semiconductor manufacturing member, and method of manufacturing aluminum nitride sintered body
AssigneeNGK Insulators, Ltd.
InventorsNaomi Teratani, Naohito Yamada
Life of this patent
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Abstract
An aluminum nitride sintered body essentially contains aluminum nitride. It contains 0.4 to 2.5 wt % magnesium and 2.0 to 5.0 wt % yttrium, and has an average particle size of not more than 1.0 μm.
Claims9
An aluminum nitride sintered body essentially containing aluminum nitride, containing 0.4 to 2.5 wt % magnesium and 2.0 to 5.0 wt % yttrium, and having an average particle size of not more than 1.0 μm.
A method of manufacturing an aluminum nitride sintered body, comprising:
- molding raw material powder into a compact, the raw material powder containing aluminum nitride raw material, 0.5 to 3.0 mol % magnesium on a magnesium oxide basis, and 0.5 to 1.5 mol % yttrium on a yttrium oxide basis;
- and
- sintering the compact at a temperature of not more than 1750° C.
Dependencies are inferred from the claim text.