Enhancement mode transceiver and switched gain amplifier integrated circuit
AssigneeFreescale Semiconductor, Inc.
InventorsElizabeth Glass, Olin Hartin, Ngai Lau, Neil Tracht
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AssigneeFreescale Semiconductor, Inc.
InventorsElizabeth Glass, Olin Hartin, Ngai Lau, Neil Tracht
Estimating the term…
Methods and apparatus are provided for RF switches (504, 612) integrated in a monolithic RF transceiver IC (500) and switched gain amplifier (600). Multi-gate n-channel enhancement mode FETs (50, 112, 114, Q1-3, Q4-6) are used with single gate FETs (150), resistors (Rb, Rg, Re, R1-R17) and capacitors (C1-C3) formed by the same manufacturing process. The multiple gates (68) of the FETs (50, 112, 114, Q1-3, Q4-6) are parallel coupled, spaced-apart and serially arranged between source (72) and drain (76). When used in pairs (112, 114) to form a switch (504) for a transceiver (500) each FET has its source (74) coupled to an antenna RF I/O port (116, 501) and drains coupled respectively to second and third RF I/O ports (118, 120; 507, 521) leading to the receiver side (530) or transmitter side (532) of the transceiver (500). The gates (136, 138) are coupled to control ports (122, 124; 503, 505; 606, 608). When used in pairs (Q1-3, Q4-6) to form a variable switched attenuator, the first FET (Q1-3) is a pass device and the second FET (Q4-6) is a shunt device that respectively bridge two series resistors (R1, R2) and block a shunt resistor (R3) of a T-type attenuator.
A switched gain RF amplifier having an RF IN port, an RF OUT port and two or more control ports, comprising:
An RF switched attenuator, comprising:
A monolithic integrated circuit transceiver having an antenna RF I/O port configured to send an RF signal to or receive an RF signal from an antenna, an another frequency output port and an RF signal input port, wherein the transceiver comprises:
Dependencies are inferred from the claim text.