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US 2006/0216954 A1Published application
Method for manufacturing semiconductor device
AssigneeFujitsu Limited
InventorWensheng Wang
Life of this patent
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Abstract
After a bottom electrode film is formed, a ferroelectric film is formed on the bottom electrode film. Then, a heat treatment is performed for the ferroelectric film in an oxidizing atmosphere so as to crystallize the ferroelectric film. Then, a top electrode film is formed on the ferroelectric film. In the heat treatment (i.e., annealing for crystallization), a flow rate of oxidizing gas is set to be in a range of from 10 sccm to 100 sccm.
Claims20
A method for manufacturing a semiconductor device comprising the steps of:
- forming a bottom electrode film;
- forming a high dielectric constant film on the bottom electrode film;
- performing a heat treatment in an oxidizing atmosphere for the high dielectric constant film to crystallize the high dielectric constant film, a flow rate of an oxidizing gas being set to be in a range of from 10 sccm to 100 sccm during the heat treatment;
- and
- forming a top electrode film on the high dielectric constant film.
2 more elements
A method for manufacturing a semiconductor device comprising the steps of:
- forming a bottom electrode film;
- forming a high dielectric constant film on the bottom electrode film;
- performing a first heat treatment in a mixed atmosphere of an oxidizing gas and an inert gas to crystallize the high dielectric constant film, a flow rate of the oxidizing gas being lower than 50 sccm, and a flow rate of the inert gas being 1500 sccm or more;
- forming a first top electrode film on the high dielectric constant film;
- performing a second heat treatment in an oxidizing atmosphere;
- and
- forming a second top electrode film on the first top electrode film.
4 more elements
Dependencies are inferred from the claim text.