US 2006/0216953 A1 · Method of forming film and film forming apparatus

Abstract

The object of the present invention is to increase the crystallization temperature of a hafnium compound film which can be effectively used as a high dielectric constant film of a gate oxide film of a MOSFET, for example. A hafnium silicate film is deposited on a substrate by reacting a vapor of a hafnium organic compound with a monosilane gas or a disilane gas in a reaction vessel in a heated vacuum atmosphere. Due to the crystallization restraining effect of silicon, the thus obtained film has a higher crystallization temperature. In another embodiment of the present invention, an oxygen-containing hafnium compound film is annealed in a heated ammonia gas atmosphere. The annealing also increase the crystallization temperature of the oxygen-containing hafnium compound film.

Claims13

Dependent claims

A film forming method comprising:

reacting a hafnium organic compound and a silane-series gas in a reaction vessel, thereby depositing a hafnium silicate film on a substrate.

Dependencies are inferred from the claim text.

Facts

Application

10/552,468Filed 8 Apr 2004

Priority

JP 2003-1044378 Apr 2003

Published

28 Sep 2006

Term ends

Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10P 14/693
The material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides: the material…
C23C 16/401
Oxides: containing silicon
H10P 14/6682
The precursor containing a compound comprising Si: the compound being a silane, e.g. disilane, methylsilane or chlorosilane
H10P 14/6334
Deposition from the gas or vapour phase: using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition

Method of forming film and film forming apparatus

Life of this patent

Method of forming film and film forming apparatus

Life of this patent

Abstract

Claims13