Cyclical deposition of refractory metal silicon nitride

A method for depositing a tantalum silicon nitride layer on a substrate, comprising:

• positioning a substrate within a process chamber comprising a centralized expanding channel that conically tapers towards and substantially covers the substrate;
• flowing a process gas into the centralized expanding channel to form a circular flow pattern;
• exposing the substrate to the process gas having the circular flow pattern;
• and
• exposing the substrate sequentially to chemical precursors during at least one cycle of an atomic layer deposition process to form a tantalum silicon nitride material thereon, comprising:
• pulsing a tantalum precursor into the process gas having the circular flow pattern;
• pulsing a nitrogen precursor into the process gas having the circular flow pattern;
• and
• pulsing a silicon precursor into the process gas having the circular flow pattern.

A method for depositing a titanium silicon nitride layer on a substrate, comprising:

• positioning a substrate within a process chamber comprising a centralized expanding channel that conically tapers towards and substantially covers the substrate;
• flowing a process gas into the centralized expanding channel to form a circular flow pattern;
• exposing the substrate to the process gas having the circular flow pattern;
• and
• exposing the substrate sequentially to chemical precursors during at least one cycle of an atomic layer deposition process to form a titanium silicon nitride material thereon, comprising:
• pulsing a titanium precursor into the process gas having the circular flow pattern;
• pulsing a nitrogen precursor into the process gas having the circular flow pattern;
• and
• pulsing a silicon precursor into the process gas having the circular flow pattern.

A method for depositing a metal silicon nitride layer on a substrate, comprising:

• positioning a substrate within a process chamber comprising a centralized expanding channel that conically tapers towards and substantially covers the substrate;
• flowing a process gas into the centralized expanding channel to form a circular flow pattern;
• exposing the substrate to the process gas having the circular flow pattern forming a plasma by igniting the process gas;
• and
• exposing the substrate sequentially to chemical precursors during at least one cycle of an atomic layer deposition process to form a metal silicon nitride material thereon, comprising:
• pulsing a metal precursor into the process gas having the circular flow pattern;
• pulsing a nitrogen precursor into the process gas having the circular flow pattern;
• and
• pulsing a silicon precursor into the process gas having the circular flow pattern.

A method for depositing a metal silicon nitride layer on a substrate, comprising:

• positioning a substrate within a process chamber comprising a centralized expanding channel that conically tapers towards and substantially covers the substrate;
• flowing a process gas into the centralized expanding channel to form a circular flow pattern;
• forming a plasma by igniting the process gas;
• exposing a center portion of the substrate to the process gas having the circular flow pattern and flowing the process gas across the substrate and towards an outer edge of the substrate;
• and
• exposing the substrate sequentially to chemical precursors during at least one cycle of an atomic layer deposition process to form a metal nitride material thereon, comprising:
• pulsing a metal precursor into the process gas having the circular flow pattern;
• and
• pulsing a nitrogen precursor into the process gas having the circular flow pattern.

A method for depositing a metal-containing layer on a substrate, comprising:

• positioning a substrate within a process chamber comprising a centralized expanding channel that conically tapers towards and substantially covers the substrate;
• flowing a process gas into the centralized expanding channel to form a circular flow pattern;
• exposing the substrate to the process gas having the circular flow pattern forming a plasma by igniting the process gas;
• and
• exposing the substrate sequentially to chemical precursors during at least one cycle of an atomic layer deposition process to form a metal-containing material thereon, comprising:
• pulsing a metal precursor into the process gas having the circular flow pattern;
• pulsing a second precursor into the process gas having the circular flow pattern;
• and
• pulsing a third precursor into the process gas having the circular flow pattern.