Semiconductor integrated circuit device and a method of manufacturing the same

A method of manufacturing a semiconductor integrated circuit device, comprising steps of:

• (a) forming a first insulating film over a semiconductor substrate;
• (b) forming a first wiring in said first insulating film;
• (c) forming a second insulating film over said first wiring;
• (d) forming a third insulating film over said second insulating film;
• (e) forming a trench by etching said third insulating film;
• (f) forming a hole by etching said third insulating film;
• (g) etching said second insulating film such that said hole is extended to said first wiring;
• (h) etching a surface of said first wiring;
• (i) forming a first conductive film over the bottom of said trench, the sidewalls of said trench, the bottom of said hole and the sidewalls of said hole;
• and
• (j) forming a second conductive film over said first conductive film such that said second conductive film is embedded in said hole and trench,
• wherein in said step (i), said first conductive film is formed by a method of bias sputtering, and
• wherein a thickness of said first conductive film at the center of the bottom of said hole is larger than amount of said etching in said step (g).

A method of manufacturing a semiconductor integrated circuit device, comprising steps of:

• (c) forming a first insulating film over a semiconductor substrate;
• (d) forming a first wiring in said first insulating film;
• (c) forming a second insulating film over said first wiring;
• (d) forming a third insulating film over said second insulating film;
• (e) forming a hole by etching said second and third insulating films, said hole being extended to expose said first wiring;
• (f) etching a surface of said first wiring;
• (g) forming a first conductive film over the bottom and sidewalls of said hole;
• and
• (h) forming a second conductive film over said first conductive film such that said second conductive film is embedded in said hole,
• wherein in said step (g), said first conductive film is formed by a method of bias sputtering, and
• wherein a thickness of said first conductive film at the center of the bottom of said hole is larger than a surface amount etched of said first wiring in said step (f).