Method for manufacturing semiconductor device, and method and structure for implementing semiconductor device
AssigneeSeiko Epson Corporation
InventorShuichi Tanaka
Life of this patent
Estimating the term…
Abstract
A method for manufacturing a semiconductor device includes forming an electrode; forming a projection projecting with respect to the electrode by melting a resin; and providing a conductive layer electrically connected to the electrode. The conductive layer is extended to an upper surface of the projection. Therefore, productivity of the semiconductor is improved.
Claims16
A method for manufacturing a semiconductor device, comprising:
- forming an electrode;
- forming a projection projecting with respect to the electrode by melting a resin;
- and
- providing a conductive layer electrically connected to the electrode, the conductive layer being extended to an upper surface of the projection.
A method for manufacturing a semiconductor device, comprising:
- forming an electrode on a substrate;
- providing a protection film that covers the electrode;
- forming a resin projecting body on the protection layer;
- forming a projection having a smooth and curved surface by melting the projecting body;
- and
- providing a conductive layer that covers the projection and is electrically connected to the electrode.
A method for implementing a semiconductor device, the semiconductor device including an electrode, a projection that is formed of a first resin and projects with respect to the electrode, and a conductive layer that is electrically connected to the electrode and covers an upper surface of the projection, the method comprising:
- preparing a second resin the curing temperature of which is lower than the glass transition temperature of the first resin;
- and
- implementing the semiconductor device on a mounting substrate with a joint material formed of the second resin arranged between the semiconductor device and the mounting substrate through heating and pressurization.
A method for implementing a semiconductor device on a mounting substrate, comprising:
- forming a projection that projects with respect to an electrode provided in the semiconductor device using a first resin;
- providing a conductive layer that is electrically connected to the electrode and covers the projection;
- forming a joint material using a second resin the curing temperature of which is lower than the glass transition temperature of the first resin;
- arranging the joint material between the semiconductor device and the mounting substrate;
- and
- performing heating and pressurization on the joint material, the semiconductor device, and the mounting substrate with the joint material located between the semiconductor device and the mounting substrate.
A structure for implementing a semiconductor device, the semiconductor device including an electrode, a projection that is formed of a first resin and projects with respect to the electrode, and a conductive layer that is electrically connected to the electrode and covers an upper surface of the projection,
- wherein the semiconductor device is implemented on the mounting substrate with a joint material arranged between the semiconductor device and the mounting substrate through heating and pressurization, the joint material being formed of a second resin, the glass transition temperature of the first resin being higher than the curing temperature of the second resin.
Dependencies are inferred from the claim text.