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US 2006/0216916 A1Published application
Plasma Treatment at Film Layer to Reduce Sheet Resistance and to Improve Via Contact Resistance
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJian-Shin Tsai, Yu-Hua Chou, Tzo-Hung Luo, Chi-Chan Tseng, Wei Zhang, Jong-Chen Yang
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Abstract
A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.
Claims20
A semiconductor device, comprising:
- a substrate;
- a plurality of logic devices located over the substrate;
- an insulating layer located over the logic devices and including a plurality of recesses exposing underlying ones of the logic devices;
- an agglutinating layer located over the insulating layer including within the plurality of recesses, the agglutinating layer having an enlarged grain size due to plasma treatment with a process chemistry comprising nitrogen and hydrogen;
- a barrier layer located over the plasma-treated agglutinating layer including within the plurality of recesses;
- and
- a conductive layer located over the barrier layer including within the plurality of recesses.
4 more elements
A semiconductor device, comprising:
- a logic device located over a substrate;
- an insulating layer located over the logic device, wherein a recess in the insulating layer exposes at least a portion of the logic device;
- an agglutinating layer located over the insulating layer and within the recess, the agglutinating layer having an enlarged grain size due to plasma treatment;
- a barrier layer located over the plasma-treated agglutinating layer and within the recess;
- and
- a conductive layer located over the barrier layer and within the recess.
3 more elements
Dependencies are inferred from the claim text.