Method of growing non-polar a-plane gallium nitride
AssigneesSamsung Electro-Mechanics Co., Ltd., The University of Tokushima
InventorsSoo Lee, Rak Choi, Naoi Yoshiki, Sakai Shiro, Masayoshi Koike
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Abstract
The invention provides a method of growing a non-polar a-plane gallium nitride. In the method, first, an r-plane substrate is prepared. Then, a low-temperature nitride-based nucleation layer is deposited on the substrate. Finally, the non-polar a-plane gallium nitride is grown on the nucleation layer. In growing the non-polar a-plane gallium nitride, a gallium source is supplied at a flow rate of about 190 to 390 μmol/min and the flow rate of a nitrogen source is set to produce a V/III ratio of about 770 to 2310.
Claims12
A method of growing a non-polar a-plane gallium nitride comprising steps of:
- (a) preparing an r-plane substrate;
- (b) depositing a low-temperature nitride-based nucleation layer on the substrate;
- and
- (c) growing the non-polar a-plane gallium nitride on the nucleation layer,
- wherein the growing step (c) is carried out under the condition that a gallium source is supplied at a flow rate of about 190 μmol/min to about 390 μmol/min and the flow rate of a nitrogen source is set to produce a V/III ratio of about 770 to 2310.
Dependencies are inferred from the claim text.