Wafer laser processing method
AssigneeDisco Corporation
InventorsToshiyuki Yoshikawa, Nobuyasu Kitahara, Noboru Takeda
Life of this patent
Estimating the term…
Abstract
A wafer laser processing method for forming a groove in a wafer having a protective film on the processing surface of a substrate along a predetermined processing line, comprising a first step for forming a first groove in the protective film along the dividing lines by applying a first pulse laser beam set to an output at which the protective film can be processed but the substrate can not be processed, to the protective film along the processing lines; and a second step for forming a second groove in the substrate along the first grooves by applying a second pulse laser beam set to an output at which the substrate can be processed, along the first grooves.
Claims2
A wafer laser processing method for forming a groove in a wafer having a protective film formed on a processing surface of a substrate along a predetermined processing line, comprising:
- a first step for forming a first groove in the protective film along the dividing lines by applying a first pulse laser beam that is set to an output at which the protective film can be processed but the substrate can not be processed, to the protective film along the processing lines;
- and
- a second step for forming a second groove in the substrate along the first grooves by applying a second pulse laser beam that is set to an output at which the substrate can be processed, along the first grooves.
Dependencies are inferred from the claim text.