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US 2006/0216903 A1Published application
Building fully-depleted and bulk transistors on same chip
AssigneeTexas Instruments Incorporated
InventorHoward Tigelaar
Life of this patent
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Abstract
A method (10) of forming fully-depleted silicon-on-insulator (FD-SOI) transistors (150) and bulk transistors (152) on a semiconductor substrate (104) as part of an integrated circuit fabrication process is disclosed.
Claims20
A method of forming a fully-depleted silicon-on-insulator (FD-SOI) transistor and a bulk transistor as part of an integrated circuit fabrication process, comprising:
- providing a silicon-on-insulator (SOI) substrate which comprises a layer of silicon material formed over a layer of insulating material which is in turn formed over a semiconductor substrate;
- forming a layer of oxide material over the layer of silicon material;
- forming a layer of nitride material over the layer of oxide material;
- patterning the layer of nitride material, the layer of oxide material, the layer of silicon material and at least some of the layer of insulating material to establish bulk regions wherein bulk transistors can be formed, and where the bulk regions separate the layer of silicon into silicon regions wherein fully depleted transistors can be formed;
- removing the layer of nitride material;
- growing an epitaxial material in the bulk regions;
- removing the layer of oxide material;
- thinning the silicon regions by growing a layer of oxide material which consumes silicon as part of the growth process;
- removing the grown layer of oxide material to reveal the thinned silicon regions;
- and
- forming a fully depleted transistor in a thinned silicon region and forming a bulk transistor in a bulk region.
8 more elements
A method of forming a fully-depleted silicon-on-insulator (FD-SOI) transistor and a bulk transistor as part of an integrated circuit fabrication process, comprising:
- providing a silicon-on-insulator (SOI) substrate which comprises a layer of silicon material formed over a layer of insulating material which is in turn formed over a semiconductor substrate;
- converting at least some of the SOI substrate into a bulk semiconductor substrate;
- thinning at least some of the silicon of the remaining SOI substrate;
- and
- forming a fully depleted transistor in an area of thinned silicon and forming a bulk transistor in an area of the bulk semiconductor substrate.
2 more elements
An integrated circuit, comprising:
- a fully depleted transistor and a bulk transistor formed on a single semiconductor substrate, where the fully depleted and bulk transistors are formed as part of an integrated circuit fabrication process, and where the fully depleted transistor is formed within a silicon-on-insulator (SOI) region of the semiconductor substrate and where the bulk transistor is formed within a bulk region of the semiconductor substrate.
Dependencies are inferred from the claim text.