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US 2006/0216902 A1Published application
Rugged metal electrodes for metal-insulator-metal capacitors
OwnerKlaus Schuegrafinventor
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Abstract
Thin film metal-insulator-metal capacitors having enhanced surface area are formed by a substituting metal for silicon in a preformed electrode geometry. The resulting metal structures are advantageous for high-density DRAM applications since they have good conductivity, enhanced surface area and are compatible with capacitor dielectric materials having high dielectric constant.
Claims14
A method of forming a rugged metal structure comprising:
- forming a rugged structure comprised of substantially silicon atoms;
- and
- replacing silicon atoms in the rugged structure with metal atoms.
A method of forming an integrated circuit capacitor on a substrate, the method comprising:
- forming a rugged silicon electrode structure on the substrate;
- forming a metal electrode having a rugged surface on the substrate after forming the rugged silicon electrode by replacing silicon in the rugged silicon electrode structure with metal;
- covering said rugged surface with a dielectric;
- and
- covering said dielectric with a second electrode.
2 more elements
Dependencies are inferred from the claim text.