Silicide process utilizing pre-amorphization implant and second spacer
AssigneeUnited Microelectronics Corp.
InventorMing-Tsung Chen
Life of this patent
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Abstract
A gate electrode is formed on a substrate with a gate insulating layer therebetween. A liner is then deposited on sidewalls of the gate electrode. Source/drain extensions are implanted into the substrate. A first spacer is then formed on the liner. Deep source/drain are implanted into the substrate. A second spacer is formed at the foot of the first spacer. A tilt-angle pre-amorphization implant (PAI) is conducted to form an amorphized layer next to the second spacer. A metal layer is then sputtered on the amorphized layer. The metal layer reacts with the amorphized layer to form a metal silicide layer thereto.
Claims10
A method of making a transistor device having silicided source/drain, comprising:
- forming a gate electrode on a substrate with a gate insulating layer therebetween;
- forming a liner on sidewalls of the gate electrode;
- implanting a source/drain extensions into the substrate;
- forming a first spacer on the liner;
- implanting a source/drain into the substrate;
- forming a second spacer at the foot of the first spacer;
- performing a tilt-angle pre-amorphization implant (PAI) to form an amorphized layer next to the second spacer;
- forming a metal layer on the amorphized layer;
- and
- reacting the metal layer with the amorphized layer to form a metal silicide layer thereto.
A method of making a transistor device having silicided source/drain, comprising:
- forming a gate electrode on a substrate with a gate insulating layer therebetween;
- forming a liner on sidewalls of the gate electrode;
- implanting a source/drain extensions into the substrate;
- forming a first spacer on the liner;
- implanting a source/drain into the substrate;
- performing a pre-amorphization implant (PAI) to form an amorphized layer next to the first spacer, wherein the PAI is carried out at an incident implant direction that is normal to a main surface of the substrate;
- forming a second spacer at the foot of the first spacer;
- forming a metal layer on the amorphized layer;
- and
- reacting the metal layer with the amorphized layer to form a metal silicide layer thereto.
Dependencies are inferred from the claim text.