High K stack for non-volatile memory
AssigneeSpansion LLC
InventorsWei Zheng, Mark Randolph, Hidehiko Shiraiwa
Life of this patent
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Abstract
A memory device may include a source region and a drain region formed in a substrate and a channel region formed in the substrate between the source and drain regions. The memory device may further include a first oxide layer formed over the channel region, the first oxide layer having a first dielectric constant, and a charge storage layer formed upon the first oxide layer. The memory device may further include a second oxide layer formed upon the charge storage layer, a layer of dielectric material formed upon the second oxide layer, the dielectric material having a second dielectric constant that is greater than the first dielectric constant, and a gate electrode formed upon the layer of dielectric material.
Claims20
A structure for use in a semiconductor device, comprising:
- a first oxide layer having a first dielectric constant;
- a charge storage layer formed upon the first oxide layer;
- a second oxide layer formed upon the charge storage layer;
- a layer of dielectric material formed on the second oxide layer, the dielectric material having a second dielectric constant greater than the first dielectric constant;
- and
- a gate electrode formed upon the layer of dielectric material.
A memory device, comprising:
- a source region and a drain region formed in a substrate;
- a channel region formed in the substrate between the source and drain regions;
- a first oxide layer formed over the channel region, the first oxide layer having a first dielectric constant;
- a charge storage layer formed upon the first oxide layer;
- a second oxide layer formed upon the charge storage layer;
- a layer of dielectric material formed upon the second oxide layer, the layer of dielectric material having a second dielectric constant that is greater than the first dielectric constant;
- and
- a gate electrode formed upon the layer of dielectric material.
A method of forming a high dielectric constant structure for a semiconductor device, comprising:
- forming a first oxide layer upon a substrate, wherein the first oxide layer has a first dielectric constant;
- forming a charge storage layer upon the first oxide layer;
- forming a second oxide layer upon the charge storage layer;
- forming a layer of dielectric material upon the second oxide layer, wherein the layer of dielectric material has a second dielectric constant that is greater than the first dielectric constant;
- and
- forming a gate electrode upon the layer of dielectric material.
Dependencies are inferred from the claim text.