Methd for forming capacitor of semiconductor device
AssigneeHynix Semiconductor Inc.
InventorHyung Choi
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Abstract
Disclosed is a method for forming a capacitor of a semiconductor device capable of improving the film quality of a dielectric film. The method includes the steps of providing a semiconductor substrate having a storage node contact; forming a metal storage electrode on the substrate; forming a dielectric film using any one chosen from a group including a single film made of HfO2, a single film made of Al2O3, and a lamination film made of HfO2 and Al2O3 on the metal storage electrode; performing CF4 plasma treatment on the dielectric film; and forming a metal plate electrode on the dielectric film.
Claims15
A method for forming a capacitor of a semiconductor device comprising the steps of:
- providing a semiconductor substrate having a storage node contact;
- forming a metal storage electrode on the substrate;
- forming a dielectric film using any one chosen from a group comprising a single film made of HfO2, a single film made of Al2O3, and a lamination film of made of HfO2 and Al2O3 on the metal storage electrode;
- performing CF4 plasma treatment on the dielectric film;
- and
- forming a metal plate electrode on the dielectric film.
A method for forming a capacitor of a semiconductor device comprising the steps of:
- providing a semiconductor substrate having a storage node contact of polysilicon material;
- forming a cap oxide film on the substrate;
- etching the cap oxide film to form a hole which exposes the storage node contact;
- forming a metal silicide film on the surface of the exposed storage node contact;
- forming a metal storage electrode on the surface of the hole including the metal silicide film;
- forming a dielectric film using any one chosen from a group comprising a single film made of HfO2, a single film made of Al2O3, and a lamination film made of HfO2 and Al2O3 on the metal storage electrode;
- performing CF4 plasma treatment on the dielectric film;
- and
- forming a metal plate electrode on the dielectric film.
Dependencies are inferred from the claim text.