Image display and manufacturing method of the same

An image display having a plurality of thin film transistors and a plurality of capacitors on a substrate, wherein

• a plurality of gate-lines and a plurality of signal-lines which cross said plurality of gate-lines in a matrix shape are formed on said substrate,
• each of said thin film transistors has:
• an island-shaped semiconductor layer having a source region, a drain region, and a channel region sandwiched between them;
• a first insulation film formed between said island-shaped semiconductor layer and a gate electrode of the same layer as that of said gate-lines;
• an interlayer insulation film formed above said island-shaped semiconductor layer;
• and a source electrode and a drain electrode which are come into contact with said source region and said drain region via an opening formed in said interlayer insulation film and which exist in the same layer as that of the signal-lines, and
• each of said capacitors has:
• a storage electrode of the same layer as that of said gate-lines;
• a second insulation film formed on said storage electrode so as to be in contact therewith;
• and an electrode which is formed on said second insulation film so as to be in contact therewith via an opening formed in said interlayer insulation film and which exists in the same layer as that of said signal-lines,
• said first insulation film being formed so as to cover said substrate, and said second insulation film being patterned to be formed to be in contact with an upper surface and side surfaces of said storage electrode and an upper surface of said first insulation film, said source region and said drain region of said thin film transistor revealing a layer structure of an electrode having same layers as layers of said island-shaped semiconductor layer/said first insulation film/said interlayer insulation film/said signal line as viewed from said substrate, said capacitor revealing a layer structure of an electrode having same layers as layers of said first insulation film/said storage electrode/said second insulation film/said signal line as viewed from said substrate, and said first insulation film and said interlayer insulation film being of a same insulation material,
• wherein said second insulation film is an oxide film of said storage electrode.