Method for annealing and method for manufacturing a semiconductor device
OwnerTakayuki Ito, Kouji Matsuo +3inventors
InventorsTakayuki Ito, Kouji Matsuo, Naoki Tamaoki, Yoshinori Honguh, Kyoichi Suguro
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Abstract
A method for annealing a semiconductor substrate by light irradiation, includes depositing a translucent film with a predetermined thickness on a semiconductor substrate. The translucent film has a refractive index that is smaller than that of the semiconductor substrate. The thickness is defined by a peak wavelength of the light and the refractive index of the translucent film. The semiconductor substrate is heated in a temperature range of about 300° C. to about 600° C. A surface of the semiconductor substrate is heated with the light which has a pulse width of about 0.1 ms to about 100 ms.
Claims20
A method for annealing by light irradiation, comprising:
- depositing a translucent film with a predetermined thickness on a semiconductor substrate, the translucent film having a refractive index smaller than the refractive index of the semiconductor substrate, the thickness defined by a peak wavelength of the light and the refractive index of the translucent film;
- heating the semiconductor substrate in a temperature range of about 300° C. to about 600° C.;
- and
- heating a surface of the semiconductor substrate with the light, the light having a pulse width of about 0.1 ms to about 100 ms.
A method for manufacturing a semiconductor device, comprising:
- forming a gate insulating film on a semiconductor substrate;
- forming a gate electrode on the gate insulating film;
- implanting first impurity ions into the semiconductor substrate using the gate electrode as a mask;
- depositing a translucent film with a predetermined thickness on the semiconductor substrate, the translucent film having a refractive index smaller than the refractive index of the semiconductor substrate;
- heating the semiconductor substrate in a temperature range of about 300° C. to about 600° C.;
- and
- heating a surface of the semiconductor substrate with a light so as to activate the first impurity ions, the light having a pulse width of about 0.1 ms to about 100 ms;
- wherein the thickness of the translucent film is defined by a peak wavelength of the light and the refractive index of the translucent film.
Dependencies are inferred from the claim text.