Method of manufacturing a semiconductor device having an organic thin film transistor
OwnerTadashi Arai, Shinichi Saitoinventors
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Abstract
Since positional displacement occurs in a case of using a printing method, an electrode substrate in which a lower electrode and an upper electrode are accurately positioned by way of an insulator could not be formed. Use of a photomask for positional alignment increases the cost outstandingly. According to the present invention, since the lower electrode is utilized as a photomask for positionally alignment with the upper electrode, positional displacement does not occur even by the use of the printing method. Accordingly, a semiconductor device such as a flexible substrate using the organic semiconductor can be formed at a reduced cost by using a printing method.
Claims16
A method of manufacturing a semiconductor device comprising an organic semiconductor film having a channel portion constituted with an organic semiconductor, a translucent insulator in contact with the channel portion, a nontranslucent gate electrode in contact with the insulator, and a pair of source and drain electrodes spaced apart through the channel portion,
- wherein ends of the pair of source and drain electrodes on a side of the gate electrode are determined by photolithography by exposure from a rear face of the substrate by using the gate electrode as a mask region for a photoresist layer.
A method of manufacturing a semiconductor device having an organic semiconductor film, comprising the steps of:
- forming a nontranslucent gate electrode above a translucent substrate;
- forming a gate insulator covering at least the gate electrode;
- forming a photoresist film including at least a region corresponding to a channel region;
- applying exposure from the side of the translucent substrate;
- developing the photoresist film after the exposure;
- forming an electrode material layer covering at least the photoresist film remaining after the development;
- removing the photoresist film remaining after the development;
- and
- forming an organic semiconductor layer for forming a channel portion.
A method of manufacturing a semiconductor device having an organic semiconductor film, comprising the steps of:
- forming a translucent gate electrode above a translucent substrate;
- forming a gate insulator covering the gate electrode;
- forming an organic semiconductor layer including at least a region corresponding to a channel region;
- forming a photoresist film including at least a region corresponding to the channel region above the organic semiconductor layer;
- applying exposure from the side of the translucent substrate;
- developing the photoresist film after the exposure;
- and
- forming an electrode material layer at least covering the photoresist film remaining after the development.
Dependencies are inferred from the claim text.